Carnegie Mellon Semiconductor Surfaces & Interfaces Group

This Web page contains links to activities in the research group of Prof. Randall Feenstra in the Physics Department at Carnegie Mellon University.

• Present Group Members:

  • Guowei He (graduate student), guoweih@andrew.cmu.edu
  • Luxmi (graduate student), luxmi@andrew.cmu.edu
  • Nishtha Srivastava (graduate student), nishthas@andrew.cmu.edu

• Past Group Members:

  • Ashutosh (former graduate student, now at Intel, Oregon)
  • Huajie Chen (former graduate student, now at IBM, Fishkill)
  • Costel Constantin (former postdoc, now at Seton Hall University)
  • Yang Dong (former graduate student, now at Western Digital, Fremont, California)
  • Roberto Duca (former visiting research scientist, now at ASML, the Netherlands)
  • Patrick Fisher (former postdoc, now at Nokomis, Inc., Pittsburgh)
  • Sandeep Gaan (former graduate student, now at Intel, Oregon)
  • Rachel Goldman (former postdoc, now at University of Michigan)
  • Bruno Grandidier (former postdoc, now at ISEN, Lille, France)
  • Nobuyuki Ishida (former visiting research scientist, now at National Institute for Materials Science, Japan)
  • Chae-Deok Lee (former research scientist, now at Raytheon, Boston)
  • Shu Nie (former graduate student, now at Sandia National Lab, California)
  • Art Smith (former postdoc, now at Ohio University)
  • Hugh McKay (former graduate student, now at IMRA America, Michigan)
  • Vidhya Ramachandran (former graduate student, now at IBM, Burlington)

• Group Photos:

  • 2002
  • 2008

• Description of Research Projects (Past and Present)

  • Scanning Tunneling Microscopy
  • Molecular Beam Epitaxy
  • DURINT Nanoporous SiC and GaN
  • Epitaxial Graphene on SiC

• Posted Software

  • SEMITIP, VERSION 1 A Poisson solver to evaluate the potential distribution around a probe tip in proximity to a semiconductor surface.
  • SEMITIP, VERSION 2. Incorporates a number of improvements, and in particular permits the inclusion of a distribution of surface states.
  • SEMITIP, VERSION 3. Incorporates a new coordinate system in the vacuum, for better convergence in certain types of problems.
  • SEMITIP, VERSION 4. Allows computation of tunnel current, in addition to the potential distribution.
  • SEMITIP, VERSION 5. Permits self-consistent computations, important for situations of accumulation or inversion.

• Picture Gallery

  • Dislocation intersecting the surface of GaN(0001), illustrating spiral growth mode. Image appeared on the cover of the 14 August 1998 issue of Science. (Same image in blue or red.) Original version of image appeared in J. Vac. Sci. Technol.
  • Surface domain boundary on Si(111)2x1.
  • STM image of the GaAs(110) surface. Gallium atoms (empty states) are pictured in green, and arsenic atoms (filled states) are shown in red.
  • Defect on GaAs(110). GaAs(110) #1. GaAs(110) #2.
  • Si(111)5x5 #1. Si(111)5x5 #2. Si(111)5x5 #3. Si(111)5x5 #4. Si(111)7x7.

• Preprints of Publications

  Click here for a list of abstracts and preprints of all of the group's publications.

• Carnegie Mellon Physics Department

  Departmental WWW page and information server

• Acknowledgements

  We are grateful to the National Science Foundation and the Office of Naval Research for supporting the research activities described above.